MC1413DR2G 数据手册

MC1413DR2G

数据手册规格

数据手册名称 MC1413DR2G
文件大小 91.515 千字节
文件类型 pdf
页数 8

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技术规格

  • RoHS: true
  • Category: Triode/MOS Tube/Transistor/Darlington Transistor Arrays
  • Datasheet: onsemi MC1413DR2G
  • Package: SOIC-16
  • Manufacturer: onsemi
  • Series: -
  • Packaging: Cut Tape (CT)
  • Part Status: Obsolete
  • Transistor Type: 7 NPN Darlington
  • Current - Collector (Ic) (Max): 500mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Vce Saturation (Max) @ Ib, Ic: 1.6V @ 500µA, 350mA
  • Current - Collector Cutoff (Max): -
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 350mA, 2V
  • Power - Max: -
  • Frequency - Transition: -
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 16-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 16-SOIC
  • Base Part Number: MC1413D
  • detail: Bipolar (BJT) Transistor Array 7 NPN Darlington 50V 500mA Surface Mount 16-SOIC